Identification of process defects using back side emission microscopy

Author

Liu, Chun-Sheng ; Peng, Charng-E ; Hsu, Chen-Chung

Author_Institution

United Microelectron. Corp., Hsin-Chu, Taiwan

fYear

1997

fDate

21-25 Jul 1997

Firstpage

230

Lastpage

233

Abstract

As the CMOS is scaling down quickly, the accurate and precise diagnosis of the process failure mechanisms in the ULSI circuits becomes more difficult and time consuming. In this paper, a new failure analysis technique for ULSI process defects using the back side emission microscopy is proposed. The real location of the defect site under the metal layer can be detected exactly by this new technique

Keywords

CMOS integrated circuits; ULSI; electron microscopy; failure analysis; field emission electron microscopy; integrated circuit technology; CMOS IC; ULSI circuit; back side emission microscopy; diagnosis; failure analysis; metal layer; process defects; CMOS process; Circuits; Cities and towns; Failure analysis; Leak detection; Microelectronics; Microscopy; Testing; Ultra large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on

Print_ISBN

0-7803-3985-1

Type

conf

DOI

10.1109/IPFA.1997.638219

Filename

638219

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2532030