DocumentCode :
2532473
Title :
Transistor effects and in situ STM of redox molecules at room temperature
Author :
Albrecht, Tim ; Guckian, Adrian ; Ulstrup, J. ; Vos, Hendrik
Author_Institution :
Dept. of Chem., Tech. Univ. Denmark, Lyngby, Denmark
fYear :
2004
fDate :
16-19 Aug. 2004
Firstpage :
134
Lastpage :
136
Abstract :
Inorganic transition metal complexes were identified as potential candidates for transistor-like behaviour in an electrochemical STM configuration at room temperature. The theoretical background has been established based on condensed matter charge transfer theory. It predicts a distinct increase of the tunnelling current close to the equilibrium potential, i.e. if molecular bridge states are tuned into resonance with the Fermi levels of the enclosing electrodes. The complexes display robust electrochemistry on Au(111) electrode surfaces. STM images at molecular resolution give detailed insight into the surface structure. STS experiments are on the way to probe putative transistor-like behaviour.
Keywords :
Fermi level; electrical conductivity; electrochemical electrodes; electrochemistry; molecular electronics; resonant tunnelling transistors; scanning tunnelling microscopy; surface states; surface structure; transition metal compounds; 293 to 298 K; Au; Au(111) electrode surfaces; Fermi level; STS; condensed matter charge transfer theory; electrochemical STM configuration; enclosing electrodes; in situ STM; inorganic transition metal complexes; molecular bridge state; molecular resolution; redox molecules; robust electrochemistry; room temperature; surface structure; transistor effects; tunnelling current; Bridges; Charge transfer; Displays; Electrodes; Image resolution; Resonance; Robustness; Surface structures; Temperature; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN :
0-7803-8536-5
Type :
conf
DOI :
10.1109/NANO.2004.1392274
Filename :
1392274
Link To Document :
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