Title :
A 1.8 V 900 MHz CMOS RF receiver
Author :
Wang, Sandy ; Sheen, Robin ; Chen, Oscal T C ; Tao, Kuang-Chung
Author_Institution :
Signal & Media Labs., Nat. Chung Cheng Univ., Chia-Yi, Taiwan
Abstract :
A 1.8 V 900 MHz CMOS RF receiver which integrates a low-noise amplifier, two down-conversion mixers, and a local oscillator has been developed. In this receiver, the single-ended two-stage low-noise amplifier is realized with a power gain of 11.6 dB and a noise figure of 3.8 dB at 900 MHz. Its 1 dB compression point is around -9 dBm. The down-conversion mixer with a single-ended RF input is designed with a conversion gain of -4 dB and the 1 dB compression point of -6 dBm. The local oscillator is implemented by using a phased-locked loop which can provide stable high-frequency oscillation signals. The proposed RF receiver was fabricated by using TSMC 0.6 μm single-poly-triple-metal CMOS technology with a die size of 2.4 mm×1.8 mm
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; UHF mixers; UHF oscillators; integrated circuit design; low-power electronics; mobile radio; phase locked loops; radio receivers; 0.6 micron; 1.8 V; 11.6 dB; 3.8 dB; 900 MHz; CMOS RF receiver; PLL; TSMC single-poly-triple-metal CMOS technology; down-conversion mixers; local oscillator; low-noise amplifier; phased-locked loop; single-ended RF input; single-ended two-stage LNA; CMOS technology; Circuit noise; Gain; Impedance; Integrated circuit technology; Local oscillators; Low-noise amplifiers; RF signals; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Circuits and Systems, 1998. IEEE APCCAS 1998. The 1998 IEEE Asia-Pacific Conference on
Conference_Location :
Chiangmai
Print_ISBN :
0-7803-5146-0
DOI :
10.1109/APCCAS.1998.743650
