A two-dimensional thermal oxidation simulator using visco-elastic stress analysis

Author

Saito, N. ; Miura, Hidekazu ; Sakata, S. ; Ikegawa, M. ; Shimizu, T. ; Masuda, H.

Author_Institution

Hitachi Ltd., Ibaraki, Japan

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

695

Lastpage

698

Abstract

A two-dimensional thermal oxidation process simulation program, OXSIM2D, has been developed, taking into account viscoelastic material properties. Novel models for oxidation, stress dependency, and the white ribbon effect are introduced. The proposed approach can be used to analyze SiO/sub x/ growth on Si surfaces and the change in stress in the total structure, including the Si substrate. Simulation results showed good agreement with experiments for both a LOCOS and a shallow trench structure.<>

Keywords

oxidation; semiconductor technology; viscoelasticity; LOCOS; OXSIM2D; Si substrate; SiO/sub 2/-Si; models; shallow trench structure; stress dependency; thermal oxidation process simulation program; two-dimensional thermal oxidation simulator; visco-elastic stress analysis; viscoelastic material properties; white ribbon effect; Analytical models; Character generation; Laboratories; Laplace equations; Material properties; Mechanical engineering; Numerical models; Oxidation; Thermal engineering; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74374

Filename

74374