DocumentCode :
2534373
Title :
Low voltage mach-zehnder modulator with InGaAs/InAlAs five layer asymmetric coupled quantum wells
Author :
Ushigome, M. ; Fukuoka, M. ; Arakawa, T. ; Tada, K.
Author_Institution :
Grad. Sch. of Eng., Yokohama Nat. Univ, Yokohama, Japan
fYear :
2009
fDate :
4-8 Oct. 2009
Firstpage :
434
Lastpage :
435
Abstract :
Modulation characteristics of FACQW MZ modulator grown by MBE were published. For a device with a 0.5-mm phase shifter and Y branches, the half-wave voltage of 2.3 V (VpiL = 1.2 Vmm) was successfully obtained.
Keywords :
III-V semiconductors; Mach-Zehnder interferometers; aluminium compounds; electro-optical modulation; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical phase shifters; semiconductor quantum wells; InGaAs-InAlAs; Mach-Zehnder modulator; asymmetric coupled quantum wells; molecular beam epitaxy; phase shifter; voltage 2.3 V; Absorption; Erbium; Indium compounds; Indium gallium arsenide; Low voltage; Molecular beam epitaxial growth; Optical modulation; Phase modulation; Phase shifters; Wavelength division multiplexing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
ISSN :
1092-8081
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2009.5343208
Filename :
5343208
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2534373
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