A broadband 3D package for RF MEMS devices utilizing through silicon vias (TSV)

Author

Lim, Y.Y. ; Chen, B.T. ; Yu, A.B. ; Shi, J.L.

Author_Institution

Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore

fYear

2011

fDate

5-9 June 2011

Firstpage

406

Lastpage

409

Abstract

Packaging RF-MEMS devices require the parasitic effects of packaging to be minimal on the RF performance. In this paper, a 0-level packaging structure which utilizes TSVs in the cap wafer for electrical connection is proposed. To determine the RF performance of the package, transmission lines (CPW) were fabricated on high resistivity silicon (HRSi) substrates, and the grounding configuration optimized for. The package structures were based on actual RF-MEMS device layouts, which include test pads for DC biasing. A package loss of 0.1 dB was measured at 10 GHz. The RLGC parameters of TSVs in a GSG configuration were also extracted up to 12 GHz. Based on the transition, a 94-GHz antenna was also designed and characterized for.

Keywords

broadband antennas; coplanar transmission lines; coplanar waveguides; integrated circuit interconnections; micromechanical devices; millimetre wave antennas; three-dimensional integrated circuits; wafer level packaging; CPW; DC biasing; GSG configuration; HRSi substrate; RF-MEMS device layouts; RLGC parameters; TSV; antenna design; broadband 3D package; coplanar waveguide; electrical connection; frequency 94 GHz; high resistivity silicon substrate; through silicon vias; transmission lines; Coplanar waveguides; Micromechanical devices; Packaging; Radio frequency; Silicon; Substrates; Through-silicon vias; Antenna; Grounding; Packaging; RF MEMS; TSV;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International

Conference_Location

Beijing

ISSN

Pending

Print_ISBN

978-1-4577-0157-3

Type

conf

DOI

10.1109/TRANSDUCERS.2011.5969489

Filename

5969489