Title :
Improvement in writing speed of electron beam direct-write lithography
Author :
Chen, C.Y. ; Su, C.C. ; Huang, J.Y. ; Yang, J.J. ; Lin, H.Y.
Author_Institution :
Micro Component Dev. Dept., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
In this study, we tried a new lithography process in order to enhance the writing speed of electron beam (e-beam) direct-write lithography. Diamond like carbon (DLC) and titanium dioxide (TiO2) thin films, which have higher secondary electrons (SE) emission coefficient, were deposited between silicon substrate and resist, respectively. In the current work, a negative chemically amplified resist, Shipley SAL601, was used, and was exposed by an electron beam recorder, Obducat, EBR200. The differences of required dose for proper e-beam exposure on each sample (including silicon bare wafer) were appeared by experiments. The results showed that the DLC and TiO2 thin films could improve on the writing speed slightly. However, adding these thin films would deteriorate the lithographic resolution. Besides, the results of E-beam exposure on TiO2 sample were more sensitive to post exposure baking (PEB) process.
Keywords :
diamond-like carbon; electron resists; secondary electron emission; semiconductor thin films; titanium compounds; C; DLC thin films; Shipley SAL601 resist; Si; TiO2; TiO2 thin films; diamond like carbon thin films; electron beam direct-write lithography; electron beam exposure; lithographic resolution; negative chemically amplified resists; post exposure baking process; silicon substrate; silicon wafer; titanium dioxide thin films; writing speed; Carbon dioxide; Diamond-like carbon; Electron beams; Lithography; Resists; Semiconductor thin films; Silicon; Sputtering; Titanium; Transistors;
Conference_Titel :
Nanotechnology, 2004. 4th IEEE Conference on
Print_ISBN :
0-7803-8536-5
DOI :
10.1109/NANO.2004.1392381
