DocumentCode :
2536261
Title :
Equipment modeling for plasma etch process using artificial neural network
Author :
Thammano, Arit
Author_Institution :
Fac. of Inf. Technol., King Mongkut´´s Inst. of Technol., Bangkok, Thailand
fYear :
1998
fDate :
24-27 Nov 1998
Firstpage :
659
Lastpage :
662
Abstract :
Nowadays, more and more electronic and communication devices have been introduced to the consumer. Those gadgets, such as cellular phone, fax, modem, computers, etc., have made our life easier and more comfortable. However, at the backdrop of the development of those facilities, the burden is on the engineers who fabricate those specialized chips, each of which has its own features, characteristics, and electrical properties. Inevitably, it is the job of those engineers, who particularly are in process development groups, to search for the best and most cost-effective among different and various ways and means to fabricate those chips. With a specific look at the wafer fabrication, it is evident that the process development is a very costly activity. Therefore, in this study, the artificial neural network (with help from a genetic algorithm) is introduced as an alternative simulation technique, which can help process engineers reduce the development time and cost
Keywords :
digital simulation; genetic algorithms; neural nets; semiconductor process modelling; sputter etching; artificial neural network; development time; genetic algorithm; plasma etch process; simulation technique; wafer fabrication; Artificial neural networks; Cellular phones; Costs; Etching; Fabrication; Genetic algorithms; Genetic engineering; Modems; Plasma applications; Plasma devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1998. IEEE APCCAS 1998. The 1998 IEEE Asia-Pacific Conference on
Conference_Location :
Chiangmai
Print_ISBN :
0-7803-5146-0
Type :
conf
DOI :
10.1109/APCCAS.1998.743907
Filename :
743907
Link To Document :
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