DocumentCode :
2537150
Title :
Controlled growth of InGaAs/InGaAsP/InP Quantum Dots using diblock copolymer lithography and selective area MOCVD growth
Author :
Mawst, L.J. ; Park, J.H. ; Kirch, J. ; Liu, C.C. ; Rathi, M.K. ; Nealey, P.F. ; Kuech, T.F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Wisconsin - Madison, Madison, WI, USA
fYear :
2009
fDate :
4-8 Oct. 2009
Firstpage :
739
Lastpage :
740
Abstract :
Diblock copolymer nanopatterning and selective growth is utilized to produce InGaAsP/In0.53Ga0.47As/InGaAsP Quantum Dots on InP substrates, demonstrating RTPL near 1.6 mum. Electroluminescence near 1.25 mum is achieved from ridge-waveguide devices.
Keywords :
gallium arsenide; indium compounds; lithography; nanopatterning; polymer blends; semiconductor quantum dots; InGaAs-InGaAsP-InP; diblock copolymer lithography; diblock copolymer nanopatterning; ectroluminescence; quantum dots; ridge-waveguide devices; selective area MOCVD growth; Dielectric substrates; Indium gallium arsenide; Indium phosphide; Lithography; MOCVD; Nanopatterning; Optical surface waves; Quantum dots; Self-assembly; Thickness control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
ISSN :
1092-8081
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2009.5343359
Filename :
5343359
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2537150
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