Title :
A 3.4 GHz to 4.3 GHz frequency-reconfigurable class E power amplifier with an integrated CMOS-MEMS LC balun
Author :
Wang, Leon ; Mukherjee, Tamal
Author_Institution :
Dept. of ECE, Carnegie Mellon Univ., Pittsburgh, PA, USA
Abstract :
A monolithically integrated differential class E power amplifier capable of dynamically switching between 3.4 GHz and 4.3 GHz operation has been designed and fabricated in a 0.35 μm BiCMOS process; this power amplifier also includes an integrated CMOS-MEMS variable capacitor enabled LC balun for differential to single-ended conversion. The power amplifier achieves a maximum output power of 19.1 dBm and a maximum power added efficiency of 15.1% with a supply voltage of 3.3 V.
Keywords :
BiCMOS analogue integrated circuits; baluns; micromechanical devices; microwave power amplifiers; BiCMOS process; CMOS-MEMS variable capacitor; LC balun; frequency 3.4 GHz to 4.3 GHz; frequency-reconfigurable class E power amplifier; monolithically integrated differential class E power amplifier; single-ended conversion; size 0.35 mum; voltage 3.3 V; Frequency; Impedance matching; MOS capacitors; Parasitic capacitance; Power amplifiers; Q factor; Radiofrequency amplifiers; Switched capacitor circuits; Switches; Switching circuits; Power amplifiers; microelectromechanical devices; power combiners;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6240-7
DOI :
10.1109/RFIC.2010.5477276
