DocumentCode :
2537817
Title :
InP DHBT mixed-signal specific ICs for advanced 40 Gb/s transmitters
Author :
Godin, J. ; Konczykowska, A. ; Riet, M. ; Berdaguer, P. ; Moulu, J. ; Puyal, V. ; Jorge, F. ; Vuye, S. ; Lefevre, R.
Author_Institution :
Alcatel R&I-Opto+, Marcoussis, France
fYear :
2004
fDate :
24-27 Oct. 2004
Firstpage :
89
Lastpage :
92
Abstract :
Various mixed signal ASICs have been designed to address 40 Gb/s optical transmission experiment needs, and realized specific research transmitters. These circuits have been fabricated using a self-aligned InP DHBT process. Three transmitters have been assembled using these IC: i) an EAM-based; ii) a DDA-based; iii) a PSBT/DPSK transmitter. Design and characterization of these circuits are reported.
Keywords :
III-V semiconductors; binary sequences; bipolar integrated circuits; differential phase shift keying; distributed amplifiers; electro-optical modulation; electroabsorption; indium compounds; integrated circuit design; mixed analogue-digital integrated circuits; optical transmitters; 40 Gbit/s; DDA-based transmitter; EAM-based transmitter; InP; InP HBT; PSBT-DPSK transmitter; circuit characterization; circuit design; mixed signal ASICs; mixed-signal specific IC; optical transmission; research transmitters; self-aligned InP DHBT process; Circuits; Clocks; DH-HEMTs; Differential quadrature phase shift keying; Heterojunction bipolar transistors; Indium phosphide; Optical films; Optical transmitters; Signal design; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
ISSN :
1550-8781
Print_ISBN :
0-7803-8616-7
Type :
conf
DOI :
10.1109/CSICS.2004.1392499
Filename :
1392499
Link To Document :
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