DocumentCode :
2538225
Title :
A 20 GHz low noise amplifier with active balun in a 0.25 um SiGe BICMOS technology
Author :
Welch, Brian ; Kornegay, Kevin ; Park, Hyun-Min ; Laskar, Joy
Author_Institution :
Cornell Univ., Ithaca, NY, USA
fYear :
2004
fDate :
24-27 Oct. 2004
Firstpage :
141
Lastpage :
144
Abstract :
A 20 GHz low noise amplifier (LNA) with an active balun fabricated in a 0.25um SiGe BICMOS (ft = 47 GHz) technology is presented The LNA achieves 7 dB of gain and a noise figure of 4.9 dB with all ports simultaneously matched with better than -16 dB of return loss. The amplifier is highly linear with an IP1dB of 0 dBm and IIP3 of 9 dBm, while consuming 14 mA of DC current from a 3.3v rail. To the authors knowledge, the LNA delivers the lowest reported noise figure and highest linearity for a silicon implementation of an (active balun /LNA) at 20 GHz.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; baluns; elemental semiconductors; microwave amplifiers; 0.25 micron; 14 mA; 20 GHz; 3.3 V; 4.9 dB; 47 GHz; 7 dB; SiGe; SiGe BICMOS technology; active balun; low noise amplifier; noise figure; Active noise reduction; BiCMOS integrated circuits; Gain; Germanium silicon alloys; Impedance matching; Linearity; Low-noise amplifiers; Noise figure; Rail to rail amplifiers; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
ISSN :
1550-8781
Print_ISBN :
0-7803-8616-7
Type :
conf
DOI :
10.1109/CSICS.2004.1392515
Filename :
1392515
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2538225
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