Monolithic GaAs PHEMT MMICs integrated with RF MEMS switches

Author

Hacker, J.B. ; Kim, M. ; Mihailovich, R.E. ; DeNatale, J.F.

Author_Institution

Rockwell Sci., Thousand Oaks, CA, USA

fYear

2004

fDate

24-27 Oct. 2004

Firstpage

229

Lastpage

232

Abstract

Low-loss RF MEMS switches have been integrated with HEMT MMIC circuits on GaAs substrates to allow the fabrication of a new class of high-performance microwave and millimeter-wave circuits. The integration process allows the co-integration of MEMS microrelays and GaAs PHEMT devices with no sacrifice in performance or yield to either device. Examples of circuits fabricated include multi-band low-noise amplifiers, transmit and receive (T/R) circuits, and a switched dual-width power amplifier at X-band. The power amplifier uses two MEMS switches at the input to guide the RF signal between two paths. Each path provides single-stage amplification using different size HEMT devices to optimize efficiency over a wide range of output power levels.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC; gallium arsenide; microswitches; microwave power amplifiers; millimetre wave integrated circuits; radiofrequency integrated circuits; GaAs; MEMS microrelays; RF MEMS switches; RF signal; X-band; microwave circuits; millimeter wave circuits; monolithic PHEMT MMIC; multiband low-noise amplifiers; switched dual-width power amplifier; transmit and receive circuits; Gallium arsenide; HEMTs; Low-noise amplifiers; MMICs; PHEMTs; Power amplifiers; Radiofrequency amplifiers; Radiofrequency microelectromechanical systems; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE

ISSN

1550-8781

Print_ISBN

0-7803-8616-7

Type

conf

DOI

10.1109/CSICS.2004.1392546

Filename

1392546