DocumentCode :
2539351
Title :
Monolithically integrated low-power phototransceiver incorporating microcavity LEDs and multiquantum well phototransistors
Author :
Qasaimeh, O. ; Zhou, Weicheng ; Bhattacharya, Pallab ; Huffaker, D. ; Deppe, D.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fYear :
2000
fDate :
19-21 June 2000
Firstpage :
175
Lastpage :
176
Abstract :
A densely packed 2D phototransceiver array is an essential element in optical display and image processing applications. However, unlike the requirements of conventional lightwave WDM-based networks, very stringent power handling and dissipation requirements must be met. The pixel size can be limited to 100 /spl mu/m/spl times/100 /spl mu/m in a 100/spl times/100 or larger array. The objective is to detect, amplify and retransmit, possibly at a different wavelength, with input power /spl sim/1-5 /spl mu/W and electrical power consumption not to exceed 500 /spl mu/W. There is therefore a need to develop low-power phototransceivers. 2D arrays of vertical-cavity surface-emitting lasers (VCSELs), operating with ultra-low threshold current, large quantum efficiency, low-beam divergence and very low power dissipation can be used for this application. However, microcavity light emitting diodes (MCLEDs) provide very high wall-plug efficiency, comparable to VCSELs at low current levels (Deppe et al, 1999). The monolithic integration of high-sensitivity heterojunction phototransistors (HPTs) and MCLEDs in a phototransceiver is therefore very attractive for agile sensor technologies. We report here the design and performance characteristics of GaAs based multiquantum well HPT/MCLED low-power phototransceivers which offer the potential of large area uniformity and less sensitivity to temperature variations.
Keywords :
III-V semiconductors; display devices; gallium arsenide; image processing equipment; integrated optoelectronics; light emitting diodes; low-power electronics; optical receivers; optical transmitters; photodetectors; phototransistors; quantum well devices; semiconductor quantum wells; transceivers; 2D VCSEL arrays; 2D phototransceiver array; GaAs; GaAs based multiquantum well HPT/MCLED low-power phototransceivers; MCLEDs; agile sensor technologies; beam divergence; current levels; electrical power consumption; heterojunction phototransistors; image processing applications; input power; large area uniformity; lightwave WDM-based networks; low-power phototransceivers; microcavity LEDs; microcavity light emitting diodes; monolithically integrated low-power phototransceiver; multiquantum well phototransistors; optical display applications; phototransceiver; pixel size; power dissipation; power handling; quantum efficiency; sensitivity; temperature variations; ultra-low threshold current; vertical-cavity surface-emitting lasers; wall-plug efficiency; Energy consumption; Image processing; Optical arrays; Optical sensors; Optical surface waves; Power lasers; Semiconductor laser arrays; Stimulated emission; Two dimensional displays; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2000. Conference Digest. 58th DRC
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-6472-4
Type :
conf
DOI :
10.1109/DRC.2000.877137
Filename :
877137
Link To Document :
بازگشت