Title :
94 GHz silicon co-integrated LNA and Antenna in a mm-wave dedicated BiCMOS technology
Author :
Pilard, R. ; Gloria, D. ; Gianesello, Frederic ; Le Pennec, F. ; Person, C.
Author_Institution :
STMicroelectronics, Technol. R&D - STD - TPS, Crolles, France
Abstract :
A co-integrated Low Noise Amplifier (LNA) with a dipole antenna is designed considering a millimeter-wave dedicated BiCMOS technology. The targeted application is a 94 GHz passive imaging for security applications. The LNA is based on a high-speed SiGe:C 130 nm HBT. The interest of the co-integration on a common silicon substrate is demonstrated through the decrease of insertion losses between the antenna and the amplifier. The capability of the BiCMOS9MW technology is illustrated to achieve this co-integration reaching a total gain of 3.0 dB (Gantenna + GLNA) for a power consumption of 11 mW, in a single-stage LNA configuration. A two-stage configuration achieves a total gain of 8.5 dB with a power consumption of 21 mW.
Keywords :
BiCMOS integrated circuits; dipole antennas; heterojunction bipolar transistors; low noise amplifiers; millimetre wave integrated circuits; power consumption; HBT; SiGe; cointegrated LNA; cointegrated low noise amplifier; dipole antenna; frequency 94 GHz; gain 3 dB; gain 8.5 dB; mm-wave dedicated BiCMOS technology; passive imaging; power 11 mW; power 21 mW; power consumption; security application; silicon substrate; size 130 nm; BiCMOS integrated circuits; Dipole antennas; Energy consumption; Gain; Heterojunction bipolar transistors; Insertion loss; Low-noise amplifiers; Millimeter wave technology; Security; Silicon;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6240-7
DOI :
10.1109/RFIC.2010.5477390
