DocumentCode :
2539854
Title :
Nanocrystalline SiC metal-semiconductor-metal photodetector with ZnO nanorod arrays for high-temperature applications
Author :
Lien, Wei-Cheng ; Tsai, Dung-Sheng ; Chiu, Shu-Hsien ; Senesky, Debbie G. ; Maboudian, Roya ; Pisano, Albert P. ; He, Jr-Hau
Author_Institution :
Appl. Sci. & Technol. Program, Univ. of California, Berkeley, CA, USA
fYear :
2011
fDate :
5-9 June 2011
Firstpage :
1875
Lastpage :
1878
Abstract :
This work demonstrates a method to develop high temperature metal-semiconductor-metal photodetectors using low-temperature, ion beam assisted deposition of nanocrystalline silicon carbide (SiC) and hydrothermal synthesis of zinc oxide (ZnO) nanorod arrays. Due to incorporation of ZnO nanorod arrays, the photo-to-dark current ratio of Au/nanocrystalline SiC is increased from 4.9 to 13.3 at 25°C and from 4.85 to 7.57 at 200°C. The results, suggest that the ZnO nanorod arrays could serve as an antireflection layers to guide more light into the SiC photodetectors. These preliminary results support the integration of nanocrystalline SiC and ZnO nanorod arrays for use in high temperature photo-detection applications.
Keywords :
II-VI semiconductors; ion beam assisted deposition; metal-semiconductor-metal structures; nanofabrication; nanorods; photodetectors; silicon compounds; wide band gap semiconductors; zinc compounds; Au-SiC-Au; Au-ZnO-Au; antireflection layer; high temperature metal-semiconductor-metal photodetector; high temperature photodetection application; hydrothermal synthesis; low-temperature ion beam assisted deposition; nanocrystalline metal-semiconductor-metal photodetector; nanocrystalline silicon carbide deposition; photo-to-dark current ratio; zinc oxide nanorod array; Gold; Ion beams; Photodetectors; Silicon; Silicon carbide; Temperature measurement; Zinc oxide; Nanocrystalline SiC; ZnO nanorods; antireflection; high-temperature photodetector;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
ISSN :
Pending
Print_ISBN :
978-1-4577-0157-3
Type :
conf
DOI :
10.1109/TRANSDUCERS.2011.5969795
Filename :
5969795
Link To Document :
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