DocumentCode
2540134
Title
Comparative analysis of subthreshold swing models for different double gate MOSFETs
Author
Sadi, Mehdi Zahid ; Karmakar, Nittaranjan ; Alam, Mohammed Khorshed ; Islam, M.S.
Author_Institution
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng.&Technol., Dhaka
fYear
2008
fDate
20-22 Dec. 2008
Firstpage
152
Lastpage
157
Abstract
We have analyzed the different structures of the DG MOSFETs and their potentials in suppressing short channel effects (SCEs). In particular, we have developed compact physics-based model of the subthreshold swing. Asymmetric DG MOSFET shows superior performance in the nanometer region. The new scale length for DG MOSFETs has been derived from the subthreshold swing model (S model). The new scale length is compared with that of the reported values. The developed physics-based model shows better results.
Keywords
MOSFET; semiconductor device models; compact physics-based model; double gate MOSFETs; scale length; short channel effects; subthreshold swing; DH-HEMTs; Electrostatics; MOSFETs; Moore´s Law; Numerical simulation; Poisson equations; Semiconductor films; Semiconductor process modeling; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Computer Engineering, 2008. ICECE 2008. International Conference on
Conference_Location
Dhaka
Print_ISBN
978-1-4244-2014-8
Electronic_ISBN
978-1-4244-2015-5
Type
conf
DOI
10.1109/ICECE.2008.4769191
Filename
4769191
Link To Document