DocumentCode :
2540375
Title :
Effect of electron-beam irradiation on electrical characterization of nanowires in scanning electron microscope
Author :
Zhang, Y. ; Sun, Y.
Author_Institution :
Univ. of Toronto, Toronto, ON, Canada
fYear :
2011
fDate :
5-9 June 2011
Firstpage :
2582
Lastpage :
2585
Abstract :
The characterization of electrical properties of individual nanowires/nanotubes inside scanning electron microscopes has been demonstrated. However, the effect of electron-beam irradiation on the characterization results is not clearly known. Using a MEMS device we developed for the electromechanical characterization of nanowires, this study reveals that electron irradiation significantly alters the measured current-voltage characteristics of nanowire specimens. Single silicon nanowires are characterized using this MEMS device. The electron irradiation effect is quantified.
Keywords :
electromechanical effects; electron beam effects; micromechanical devices; nanowires; scanning electron microscopes; semiconductor nanotubes; MEMS device; electron-beam irradiation effect; nanotube electrical properties; nanowire electrical properties; nanowire electromechanical characterization; scanning electron microscope; single silicon nanowire; Micromechanical devices; Nanowires; Radiation effects; Scanning electron microscopy; Silicon; Strain; Electrical characterization; electromechanical characterization; electron microscopy; electron-beam irradiation; single nanowires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
ISSN :
Pending
Print_ISBN :
978-1-4577-0157-3
Type :
conf
DOI :
10.1109/TRANSDUCERS.2011.5969825
Filename :
5969825
Link To Document :
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