DocumentCode :
2542605
Title :
Crystalline and the luminescence characteristics of β-FeSi2 in photonics formed by pulsed laser deposition
Author :
Hossain, M. Zakir ; Mimura, T. ; Uekusa, S.
Author_Institution :
Dept. of Electron. & Bioinf., Meiji Univ., Kawasaki
fYear :
2008
fDate :
20-22 Dec. 2008
Firstpage :
807
Lastpage :
811
Abstract :
Compound semiconducting silicide beta-FeSi2 has been formed on FZ - Si (111) substrates by means of pulsed laser deposition (PLD) method using ArF (lambda = 193 nm) excimer laser. In photoluminescence (PL) measurements at 8K detected by a Ge detector, the PL spectra of the samples annealed at 900 degC for 1, 5, 8 and 20 hrs showed that the PL intensities of the A-and peak increased depending on annealing time in comparison with those of the as-deposited sample. The intrinsic PL intensity of the A-band peak from 20 hr annealed sample was investigated. The dependence of the PL excitation power density of the 20-hr-annealed sample also showed A-band peak at 0.808 eV that almost constant peak position. The temperature dependence PL intensity of the 20-hr-annealed sample in the ranges 15 K~150 K by an InGaAs detector showed the PL peak was at 0.808 eV. This peak confirmed the intrinsic PL peak of A-band of the beta-FeSi2. The transmittance of the thin films was measured in the range 0-2500 nm. Moreover, it is calculated the refractive indices using the reflectance. We report an application of beta-FeSi2 with crystalline and luminescence characteristics with a high refractive index in photonics.
Keywords :
annealing; iron compounds; photoluminescence; pulsed laser deposition; reflectivity; refractive index; semiconductor materials; semiconductor thin films; FZ-Si (111) substrates; FeSi2; Si; annealing; compound semiconducting silicide; photoluminescence; pulsed laser deposition; reflectance; refractive indices; temperature 15 K to 150 K; temperature 900 degC; thin films; time 1 hr; time 20 hr; time 5 hr; time 8 hr; transmittance; wavelength 0 nm to 2500 nm; Annealing; Crystallization; Detectors; Luminescence; Optical pulses; Pulsed laser deposition; Semiconductivity; Semiconductor lasers; Silicides; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Computer Engineering, 2008. ICECE 2008. International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4244-2014-8
Electronic_ISBN :
978-1-4244-2015-5
Type :
conf
DOI :
10.1109/ICECE.2008.4769321
Filename :
4769321
Link To Document :
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