DocumentCode :
2543602
Title :
Formation of shallow p+/n junction in silicon by non-melt laser annealing
Author :
Aid, Siti Rahmah ; Matsumoto, Satoru ; Fuse, Genshu ; Sakuragi, Susumu
Author_Institution :
Keio Univ., Yokohama, Japan
fYear :
2011
fDate :
9-10 June 2011
Firstpage :
132
Lastpage :
135
Abstract :
In this work, shallow p+/n junction was formed by annealing the implanted samples (prepared by Ge preamorphization implantation (Ge-PAI) and low energy B implantation) with non-melt laser annealing process using two different laser sources, i.e. excimer laser, KrF and green laser in order to compare the dopant diffusion, activation and regrowth of implanted layer. Experimental results show that remarkable boron diffusion occurred during annealing of the samples subjected to KrF laser annealing with a very short annealing time. Only slight diffusion of boron at the tail region is observed in the samples subjected green laser annealing. We considered that the penetration depth and pulse duration are the important factors that may cause the difference in boron diffusion during annealing process.
Keywords :
elemental semiconductors; excimer lasers; germanium; ion implantation; krypton compounds; laser beam annealing; p-n junctions; silicon; Ge; KrF laser; Si; boron diffusion; dopant diffusion; excimer laser; green laser; implanted layer; low energy B implantation; non melt laser annealing; penetration depth; preamorphization implantation; pulse duration; shallow p+/n junction; Annealing; Boron; Green products; Junctions; Measurement by laser beam; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Junction Technology (IWJT), 2011 11th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-61284-131-1
Type :
conf
DOI :
10.1109/IWJT.2011.5970017
Filename :
5970017
Link To Document :
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