Title :
Novel traveling wave-HPT technology with integrated polyimide optical waveguides
Author :
Scott, D.C. ; Prakash, D.P. ; Wang, W. ; Jalali, Bahram ; Fetterman, H.R.
Abstract :
In realizing efficient heterojunction phototransistors (HPTs), classic design conflicts arise between the simultaneous optimization of high-frequency performance and optical coupling efficiency. In this paper, we propose to resolve these issues by utilizing a novel traveling wave AlInAs-InGaAs HPT (TW-HPT) configuration in which optical power transfer occurs along the sides of the device from a polyimide channel waveguide. Unlike p-i-n or MSM traveling wave implementations, this structure has gain at the IF frequencies.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optics; optical communication equipment; optical polymers; optical waveguides; phototransistors; AlInAs-InGaAs; IF frequencies; design conflicts; heterojunction phototransistors; high-frequency performance; integrated polyimide optical waveguides; optical coupling efficiency; optical power transfer; polyimide channel waveguide; traveling wave AlInAs-InGaAs HPT; traveling wave-HPT technology; Design optimization; Frequency; Heterojunctions; Optical coupling; Optical design; Optical devices; Optical waveguides; PIN photodiodes; Phototransistors; Polyimides;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.571570
