Title :
Effect of AC stress on oxide TDDB and trapped charge in interface states
Author :
Rebuffat, B. ; Masson, P. ; Ogier, J.-L. ; Mantelli, M. ; Laffont, R.
Author_Institution :
STMicroelectron., Rousset, France
Abstract :
This study is driven by the need to improve the oxide reliability of a memory cell. The effects of dynamic high electric field stressing on thin oxide have been studied. Difference between time to breakdown with static stress and dynamic stress has been shown. Trapped charge in interface states under dynamic and static oxide field stress has been investigated with quasi-static capacitance voltage measurement. The duty cycle of the dynamic stress has an important effect on the oxide lifetime. This duty cycle effect is also impacted by the electric field. Interface Hydrogen Released model have been studied to understand relaxation phenomena. Real use stress conditions show an important gain on lifetime.
Keywords :
dielectric relaxation; electric breakdown; flash memories; interface states; reliability; AC stress effect; duty cycle; dynamic oxide field stress; dynamic stress; electric field stressing; flash memories; interface hydrogen released model; interface states; memory cell; oxide lifetime; quasistatic capacitance voltage measurement; relaxation phenomena; reliability; static oxide field stress; trapped charge; Degradation; Electric breakdown; Electric fields; Interface states; Stress; Stress measurement; Vehicle dynamics; Time dependent dielectric breakdown; duty cycle; dynamic stress; interface state; oxide degradation;
Conference_Titel :
Integrated Circuits (ISIC), 2014 14th International Symposium on
Conference_Location :
Singapore
DOI :
10.1109/ISICIR.2014.7029500
