Title :
A BiCMOS ultrasound front end signal processor for high temperature applications
Author :
Vermesan, Ovidiu ; Blystad, Lars-Cyril ; Bahr, Roy ; Hjelstuen, Magnus ; Beneteau, Lionel ; Froelich, Benoit
Author_Institution :
SINTEF, Oslo, Norway
Abstract :
A mixed signal ASIC that implements an ultrasound front end receiver in a 0.6μm BiCMOS HotASIC® technology is described. The ASIC includes a low noise amplifier (LNA), a programmable gain amplifier (PGA), an output differential amplifier (ODA), a second order sigma delta modulator (SDM) and is the most compact system for high temperature ultrasound applications reported in literature. The circuit has a programmable gain and is designed for measuring the signal response (200kHz to 700kHz) from an ultrasound transducer. At 48MHz clock frequency and 200°C the power consumption is 85mW from a single 5V supply. The die area of the chip is 5.52 mm2.
Keywords :
BiCMOS integrated circuits; differential amplifiers; digital signal processing chips; high-temperature electronics; low noise amplifiers; mixed analogue-digital integrated circuits; receivers; sigma-delta modulation; ultrasonic transducers; 0.6 micron; 200 C; 200 to 700 kHz; 48 MHz; 5 V; 85 mW; BiCMOS HotASIC technology; BiCMOS technology; clock frequency; high temperature applications; low noise amplifier; mixed signal ASIC; output differential amplifier; programmable gain amplifier; second order sigma delta modulator; signal response; ultrasound front end receiver; ultrasound front end signal processor; ultrasound transducer; Application specific integrated circuits; BiCMOS integrated circuits; Circuit noise; Delta-sigma modulation; Differential amplifiers; Electronics packaging; Low-noise amplifiers; Signal processing; Temperature; Ultrasonic imaging;
Conference_Titel :
Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European
Print_ISBN :
0-7803-9205-1
DOI :
10.1109/ESSCIR.2005.1541616
