Title :
A 0.13/spl mu/m CMOS T/R switch design for ultrawideband wireless applications
Author :
Wu, Chang-Ching ; Yen, Albert ; Chang, Jen-Chung
Author_Institution :
UMC, Hsinchu
Abstract :
A CMOS transmit-receive (T/R) switch design for ultrawideband (UWB) wireless applications is presented. A shunt inductor is adopted in the T/R switch signal path to improve the insertion loss (IL) and work as electrostatic discharge (ESD) protection device. Two bypassing switches at the gate of the main switching transistors provide additional isolation. Control voltage as low as 1.2V is applied to handle the T/R switch operation. Implemented in UMC 0.13mum MMRF CMOS technology, the measured results show an IL of 0.78-0.99dB in the receive (RX) mode and an isolation from TX port to RX port higher than 30.8dB in the transmit (TX) mode in the 3.1-4.8GHz frequency range. The measured ESD rating is 3kV HBM. The T/R switch is designed for monolithic integration with UWB RF front-end building blocks. The on-chip inductor eliminates the need of an off-chip one for the wideband matching network
Keywords :
CMOS integrated circuits; MMIC; electrostatic discharge; inductors; switching circuits; transceivers; ultra wideband communication; 0.13 micron; 3 kV; 3.1 to 4.8 GHz; CMOS T/R switch design; CMOS transmit-receive switch design; ESD protection device; MMRF CMOS technology; UWB wireless applications; electrostatic discharge protection device; insertion loss; on-chip inductor; receive mode; shunt inductor; transmit mode; ultrawideband wireless applications; wideband matching network; CMOS technology; Electrostatic discharge; Inductors; Insertion loss; Low voltage; Protection; Shunt (electrical); Switches; Ultra wideband technology; Voltage control;
Conference_Titel :
Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on
Conference_Location :
Island of Kos
Print_ISBN :
0-7803-9389-9
DOI :
10.1109/ISCAS.2006.1693445
