• DocumentCode
    2549243
  • Title

    Charge properties of MIS structures Ni-DyxOy-n-Si [100]

  • Author

    Babushkina, Natalia V. ; Malyshev, Sergei A. ; Romanova, Lidia I. ; Chizh, Alexander L. ; Zhygulin, Dinitri V.

  • Author_Institution
    Inst. of Electron., Acad. of Sci., Minsk, Belarus
  • fYear
    2002
  • fDate
    14-16 Oct. 2002
  • Firstpage
    71
  • Lastpage
    74
  • Abstract
    The study of the charge properties of DyxOy films with the high permittivity (ε∼10÷12) on the n-Si [100] is presented It is shown that suitable charge properties of the Ni-DyxOy-n-Si [100] structures are obtained under the Dy evaporation in Ar/O2 environment and following film oxidation in oxygen stream at the temperatures 360÷380°C. Based on the results obtained in this study it is concluded that the DyxOy films are good compatible gate dielectric material with the high permittivity for the silicon MIS structures.
  • Keywords
    MIS structures; dielectric thin films; dysprosium compounds; elemental semiconductors; nickel; silicon; 360 to 380 degC; Ar-O2; Ar/O2 environment; Dy evaporation; MIS structures; Ni-DyxOy-Si; Ni-DyxOy-n-Si[100]; Si; charge properties; film oxidation; gate dielectric material; high permittivity films; Capacitance-voltage characteristics; Chemicals; Dielectric losses; MISFETs; Oxidation; Permittivity; Semiconductor films; Silicon; Temperature; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
  • Print_ISBN
    0-7803-7276-X
  • Type

    conf

  • DOI
    10.1109/ASDAM.2002.1088477
  • Filename
    1088477
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2549243