DocumentCode :
2549489
Title :
Terahertz Bloch oscillations in semiconductor superlattices
Author :
Moravcova, Helena ; Voves, Jan
Author_Institution :
Dept. of Microelectron., Czech Tech. Univ., Prague, Czech Republic
fYear :
2002
fDate :
14-16 Oct. 2002
Firstpage :
133
Lastpage :
135
Abstract :
Bloch Oscillations (BO) in AlGaAs/GaAs superlattices were studied by Monte Carlo method. A two-dimensional model based on the effective mass approximation was used for studying electron miniband transport. Scattering on polar optical and acoustic phonons as well as impurities were taken into account. Behavior of BO was studied under different conditions such as intensity of electric field temperature and concentration of ionised impurities.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; effective mass; electron-phonon interactions; gallium arsenide; impurity scattering; semiconductor superlattices; 2D model; AlGaAs-GaAs; Bloch oscillation; Monte Carlo method; acoustic phonon scattering; effective mass approximation; electron miniband transport; impurity scattering; ionised impurities; polar optical phonon scattering; semiconductor superlattices; Acoustic scattering; Effective mass; Electron optics; Gallium arsenide; Optical scattering; Optical superlattices; Phonons; Semiconductor impurities; Semiconductor superlattices; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN :
0-7803-7276-X
Type :
conf
DOI :
10.1109/ASDAM.2002.1088492
Filename :
1088492
Link To Document :
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