Title :
A 68–83 GHz power amplifier in 90 nm CMOS
Author :
Lee, Jeffrey ; Chen, Chung-Chun ; Tsai, Jen-Han ; Lin, Kun-You ; Wang, Huei
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A balanced PA covering 68-83 GHz is developed in 90 nm CMOS. Using wideband power matching topology, the PA achieves power gain of greater than 18.1 dB from 68 to 83 GHz and gain flatness within 0.2 dB from 68 to 78 GHz. The PA has a maximum saturation output power of 14 dBm at 70 GHz, and greater than 11.8 dBm from 68 to 83 GHz. The best P1dB is 12 dBm at 68 GHz, and greater than 8.3 dBm from 68 to 83 GHz.
Keywords :
CMOS integrated circuits; field effect MIMIC; millimetre wave power amplifiers; CMOS; MMIC; frequency 68 GHz to 83 GHz; gain flatness; millimeter wave; power amplifier; power gain; size 90 nm; wideband power matching topology; CMOS technology; Circuits; Couplers; Millimeter wave technology; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Topology; Wideband; CMOS; MMIC; millimeter-wave (MMW); power amplifier (PA);
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165727
