Title :
A compact 12-watt high-efficiency 2.1-2.7 GHz class-E GaN HEMT power amplifier for base stations
Author :
Van der Heijden, Mark P. ; Acar, Mustafa ; Vromans, Jan S.
Author_Institution :
Corp. I&T, NXP Semicond., Eindhoven, Netherlands
Abstract :
A compact broadband class-E power amplifier design is presented. High broadband power efficiency is observed from 2.0-2.5 GHz, where drain efficiency > 74% and PAE > 71%, when using 2nd-harmonic input tuning. The highest in-band efficiency performance is observed at 2.14 GHz from a 40 V supply with peak drain-efficiency of 77.3% and peak PAE of 74.0% at 12 W output power and 14 dB gain. The best broadband output power performance is observed from 2.1-2.7 GHz without 2nd-harmonic input tuning, where the output power variation is within 1.5 dB and power efficiency is between 53% and 66%.
Keywords :
UHF power amplifiers; gallium compounds; power HEMT; wideband amplifiers; 2nd-harmonic input tuning; GaN HEMT power amplifier; base stations; broadband output power performance; broadband power efficiency; compact broadband class-E power amplifier design; drain efficiency; frequency 2 GHz to 2.5 GHz; frequency 2.1 GHz to 2.7 GHz; frequency 2.14 GHz; in-band efficiency performance; output power variation; peak drain-efficiency; voltage 40 V; Bandwidth; Base stations; Broadband amplifiers; Capacitance; Circuits; Gallium nitride; HEMTs; High power amplifiers; Power amplifiers; Power generation; Base station; RF circuit design; broadband; class-E; gallium nitride (GaN); high electron mobility transistor (HEMT); power amplifier (PA); power-added efficiency (PAE);
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165782
