Design and analysis of ultra wideband GaN dual-gate HEMT low noise amplifiers

Author

Shih, S.E. ; Deal, W.R. ; Yamauchi, D. ; Sutton, W.E. ; Chen, Y.C. ; Smorchkova, I. ; Heying, B. ; Wojtowicz, M. ; Siddiqui, M.

Author_Institution

Northrop Grumman Corp., Redondo Beach, CA, USA

fYear

2009

fDate

7-12 June 2009

Firstpage

669

Lastpage

672

Abstract

This paper presents two ultra wide bandwidth low noise amplifiers utilizing 0.18-um AlGaN/GaN HEMT technology. The single-stage, resistive feedback microstrip amplifiers target two different frequency bands, 0.3 - 4 GHz and 1.2 - 18 GHz, capable of better than 13:1 bandwidth. Both amplifiers use dual-gate HEMT devices with an on-chip drain bias network. The low frequency amplifier achieves 17.7 dB flat gain between 300 MHz - 3 GHz, and 1.2 dB minimum noise figure around 1.3 GHz. The high frequency LNA shows an average of 13 dB gain and between 2 to 3 dB noise figure across the band. The robust LNAs can be operated under various bias voltages while similar gain and noise figure performance are maintained.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; low noise amplifiers; wideband amplifiers; AlGaN-GaN; dual-gate HEMT; frequency 0.3 GHz to 4 GHz; frequency 1.2 GHz to 1.8 GHz; frequency 300 MHz to 3 GHz; frequency amplifier; gain 17.7 dB; low noise amplifier; microstrip amplifier; size 0.18 micron; ultra wideband GaN; Bandwidth; Broadband amplifiers; Frequency; Gain; Gallium nitride; HEMTs; Low-frequency noise; Low-noise amplifiers; Noise figure; Ultra wideband technology; GaN HEMT; LNA; broadband amplifier; dual-gate HEMT; low noise amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Conference_Location

Boston, MA

ISSN

0149-645X

Print_ISBN

978-1-4244-2803-8

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2009.5165785

Filename

5165785