CMOS wideband LNA design using integrated passive device

Author

Chen, Hsien-Ku ; Hsu, Yuan-Chia ; Lin, Ta-Yeh ; Chang, Da-Chiang ; Juang, Ying-Zong ; Lu, Shey-Shi

Author_Institution

Nat. Appl. Res. Lab., Nat. Chip Implementation Center, Hsinchu, Taiwan

fYear

2009

fDate

7-12 June 2009

Firstpage

673

Lastpage

676

Abstract

A complete CMOS wideband low noise amplifier (LNA) has been designed with off-chip passive device. The input inductor with integrated passive device (IPD) is used for input matching and NF improvement due to its high quality factor (Q). The large inductance of 4.7 nH of choke is used for covering the bandwidth of 2~11 GHz, which is stacked on the top of CMOS for chip-area saving. Besides, the interaction between CMOS and IPD for passive devices is also considered in the work. The CMOS wideband LNA is with the merits of cost-effective and high-performance compared to the pure CMOS circuit.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; Q-factor; UHF amplifiers; UHF integrated circuits; field effect MMIC; integrated circuit noise; low noise amplifiers; passive networks; wideband amplifiers; CMOS wideband low noise amplifier; LNA; frequency 2 GHz to 11 GHz; inductance; input matching; integrated passive device; noise figure improvement; off-chip passive device; quality factor; Bandwidth; Broadband amplifiers; Circuits; Impedance matching; Inductance; Inductors; Low-noise amplifiers; Noise measurement; Q factor; Wideband; CMOS; IPD; LNA; SiP; UWB; feedback; integrated passive device; resistive feedback; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Conference_Location

Boston, MA

ISSN

0149-645X

Print_ISBN

978-1-4244-2803-8

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2009.5165786

Filename

5165786