A miniature Q-band CMOS LNA with triple-cascode topology

Author

Huang, Bo-Jr ; Wang, Huei ; Lin, Kun-You

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2009

fDate

7-12 June 2009

Firstpage

677

Lastpage

680

Abstract

In this paper, a miniature Q-band low noise amplifier (LNA) is demonstrated using 0.13-mum CMOS technology. The triple-cascode topology is utilized to achieve a high gain performance with a compact size. In addition, two inductors are placed between the cascode devices to reduce the noise and enhance the stability of the LNA. The LNA presents a maximum small signal gain of 12.6 dB and a minimum noise figure of 4 dB at 38 GHz, with a power consumption of 24 mW. The chip size is only 0.42 times 0.6 mm², including all the testing pads. To the best of our knowledge, this is the first triple-cascode LNA in millimeter-wave (MMW) regime reported to date.

Keywords

CMOS analogue integrated circuits; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; CMOS technology; frequency 38 GHz; gain 12.6 dB; millimeter-wave regime; miniature Q-band CMOS LNA; miniature Q-band low noise amplifier; noise figure; noise figure 4 dB; power 24 mW; power consumption; size 0.13 mum; small signal gain; stability; triple-cascode topology; CMOS technology; Energy consumption; Inductors; Low-noise amplifiers; Noise figure; Noise reduction; Performance gain; Stability; Testing; Topology; CMOS; Low noise amplifier; MMIC; cascode;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Conference_Location

Boston, MA

ISSN

0149-645X

Print_ISBN

978-1-4244-2803-8

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2009.5165787

Filename

5165787