Title :
HBT technologies and circuits for TDM and WDM optical networks
Author :
Wang, K.C. ; Buccue, S. ; Chang, Charles ; Pedrotti, Ken ; Price, Alistair ; Runge, Klaus ; Wu, Dolly ; Yu, Ruai ; Asbeck, Peter M. ; Metzger, Andre
Author_Institution :
Rockwell Inst. Sci. Center, Thousand Oaks, CA, USA
Abstract :
Heterojunction bipolar transistor (HBT) technologies have enabled many >10 Gb/s circuits for lightwave communications. The most common HBTs are based on AlGaAs-GaAs material system. Typically, they are emitter-up Npn transistors. A schematic cross section of a typical HBT and a Schottky diode is illustrated.
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; bipolar integrated circuits; gallium arsenide; integrated optoelectronics; optical communication equipment; time division multiplexing; wavelength division multiplexing; 10 Gbit/s; AlGaAs-GaAs; AlGaAs-GaAs material system; HBT technologies; Schottky diode; TDM; WDM optical networks; emitter-up Npn transistors; heterojunction bipolar transistor; lightwave communications; schematic cross section; Circuits; Gallium arsenide; Heterojunction bipolar transistors; High speed optical techniques; Optical arrays; Optical fiber networks; Repeaters; Time division multiplexing; WDM networks; Wavelength division multiplexing;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.571626
