DocumentCode :
2553522
Title :
Generating THz radiations from gallium arsenide photoconductive switches with optimized pulse amplitude
Author :
Al Saif, Haitham ; Ibrahim, Omar A ; Islam, N.E.
Author_Institution :
University of Missouri, Columbia, 65211, USA
fYear :
2012
fDate :
8-13 July 2012
Abstract :
Summary form only given. Terahertz radiations, which have a frequency range between 100 GHz and 30 THz, have applications in many fields, including nanotechnology, and photonics1. The use of femto-second laser pulses and a gallium arsenide photoconductive switch (PCSS) to generate THz radiations is well known. THz radiation waves occur when the signal generated in the substrate moves along the PCSS material (which acts as a transmission line for the signal) to reach the contacts which acts as the radiator or antenna. The PCSS based radiators characteristics are determined by the contact shape 2 and the materials properties of the substrate where charge carriers accelerate 3.
Keywords :
Educational institutions; Gallium arsenide; Laser applications; Nanotechnology; Photonics; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science (ICOPS), 2012 Abstracts IEEE International Conference on
Conference_Location :
Edinburgh
ISSN :
0730-9244
Print_ISBN :
978-1-4577-2127-4
Electronic_ISBN :
0730-9244
Type :
conf
DOI :
10.1109/PLASMA.2012.6383317
Filename :
6383317
Link To Document :
بازگشت