Title :
Physical, chemical, and structural modifications to thin-film CuInSe2-based photovoltaic devices
Author :
Tuttle, John R. ; Contreras, Miguel ; Albin, David S. ; Noufi, Rommel
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
Two approaches to the modification and improvement of CuInSe2 -based photovoltaic devices are investigated. The incorporation of wide gap CuInSe2-based alloys at the interface is discussed. The results are inconclusive, but suggest that the choice of alloy systems is critical. The growth of enhanced-grain thin-film CuInSe2 is accomplished in two manners. The properties of the films are consistent with that required for device fabrication
Keywords :
copper compounds; grain size; indium compounds; semiconductor thin films; solar cells; ternary semiconductors; chemical modifications; enhanced-grain; interface; photovoltaic devices; physical modifications; solar cells; structural modifications; thin film CuInSe2; wide gap CuInSe2-based alloys; Atherosclerosis; Chemicals; Circuits; Crystalline materials; Fabrication; Photovoltaic systems; Radiative recombination; Solar power generation; Thin film devices; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169374
