Title :
Characterization of AlGaN/GaN-on-Si HFETs in high-power converter applications
Author :
Weiss, Benjamin ; Reiner, R. ; Quay, Ruediger ; Waltereit, P. ; Muller, Sebastian ; Benkhelifa, Fouad ; Mikulla, Michael ; Schlechtweg, Michael ; Ambacher, Oliver
Author_Institution :
Fraunhofer Inst. Appl. Solid-State Phys., Freiburg, Germany
Abstract :
AlGaN/GaN-on-Si Heterostructure Field-Effect Transistors (HFETs) for power switching are investigated in this paper. A design study for a fast switching environment for power devices is provided including an analysis of the technology, the fabrication, and the performances of large-area AlGaN/GaN-on-Si HFETs. Different power packages and high-current drivers are compared and the results are being discussed. Furthermore the power conversion efficiency is being evaluated for different power- and switching-frequency ranges by means of a converter test board. At 100 kHz efficiencies up to 98.7 % at power levels of up to 1.6 kW could be achieved. At 1 MHz and 1 kW input power an efficiency of 97.1 % was measured.
Keywords :
III-V semiconductors; aluminium compounds; driver circuits; elemental semiconductors; gallium compounds; high electron mobility transistors; power convertors; silicon; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN-on-Si heterostructure field-effect transistors; HFET; Si; converter test board; efficiency 97.1 percent; efficiency 98.7 percent; frequency 1 MHz; frequency 100 kHz; high-current drivers; high-power converter applications; power 1 kW; power 1.6 kW; power conversion efficiency; power devices; power packages; power switching; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Photonic band gap; Switches; HFET; high frequency power converter; packaging; wide bandgap devices;
Conference_Titel :
Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on
Conference_Location :
Lappeenranta
DOI :
10.1109/EPE.2014.6910745
