DocumentCode
255447
Title
Design of low noise amplifier using common gate current reused topology for wind profiling radar
Author
Venkatesh Murthy, B.T. ; Rao, I.S.
Author_Institution
Dept. of Electron. & Commun., Siddaganga Inst. of Technol., Tumkur, India
fYear
2014
fDate
11-13 Dec. 2014
Firstpage
1
Lastpage
4
Abstract
This paper presents single stage design of low noise amplifier(LNA) common gate(CG) current reused topology using pseudomorphic high electron mobility transistors(pHEMT) for wind profiling radar application at 1.3 GHz. Though CG current reused topology is not sufficient for achieving the desired parameter of LNA such as noise figure, input and output return losses and stability, so source degenerated inductor topology is also used along with the current used topology for achieving desired parameter. Low loss and low cost RT/ duroid RO4003C substrate is used. The single stage LNA results show that overall gain (S21) of 22.149 dB and a noise figure of 0.364 dB. Input and output return losses are less than -10 dB and total power consumption is 180 mW. To perform the linearity, input intercept point (IIP3) and output intercept point (OIP3) is simulated as 31.01 dBm, 47.95 dBm respectively.
Keywords
Doppler radar; high electron mobility transistors; low noise amplifiers; CG current reused topology; IIP3; LNA; OIP3; common gate current reused topology; input intercept point; low noise amplifier; output intercept point; pHEMT; pseudomorphic high electron mobility transistors; wind profiling radar application; Logic gates; Low-noise amplifiers; Noise figure; PHEMTs; Power demand; Wind; Common gate; current reuse; linearity; low noise amplifier; noise figure(NF); pseudomorphic high electron mobility transistor; ultra high frequency(UHF); wind profiling radar;
fLanguage
English
Publisher
ieee
Conference_Titel
India Conference (INDICON), 2014 Annual IEEE
Conference_Location
Pune
Print_ISBN
978-1-4799-5362-2
Type
conf
DOI
10.1109/INDICON.2014.7030475
Filename
7030475
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