Multi-finger gate ISFET (Mf-ISFET) for pH sensor application.

Author

Rani, Rozina Abdul ; Syono, Mohd Ismahadi ; Ramli, Asma Sahirah

Author_Institution

Microfluidics & BioMEMS, MIMOS Berhad, Kuala Lumpur

fYear

2008

fDate

25-27 Nov. 2008

Firstpage

350

Lastpage

353

Abstract

Study on Ion Sensitive Field Effect Transistor (ISFET) based on multi-finger gate design is presented. Mf-ISFET was fabricated by using commercial submicron 1.0 mum CMOS technology and deposited with PECVD Si₃N₄ as a sensing membrane. The electrical data such as IdVd and IdVg of ISFET are measured to identify the behaviours of ISFET. Furthermore, the evaluation test on ISFET performance such as transient analysis and hysteresis is also done and discussed in this paper. Based on experimental result gained, better performance of ISFET can be archived by ldquoconditioningrdquo the ISFET before applying it as a sensor.

Keywords

CMOS integrated circuits; chemical sensors; ion sensitive field effect transistors; pH measurement; plasma CVD; silicon compounds; CMOS technology; PECVD; hysteresis; ion sensitive field effect transistor; multifinger gate ISFET; pH sensor; transient analysis; Biosensors; CMOS technology; Circuits; Electric variables measurement; Electrodes; Epoxy resins; Hysteresis; Packaging; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on

Conference_Location

Johor Bahru

Print_ISBN

978-1-4244-3873-0

Electronic_ISBN

978-1-4244-2561-7

Type

conf

DOI

10.1109/SMELEC.2008.4770339

Filename

4770339