An experimental study of switching GaN FETs in a coaxial transmission line

Author

Joannou, A.J.L. ; Pentz, D.C. ; van Wyk, J.D. ; de Beer, A.S.

Author_Institution

Univ. of Johannesburg, Johannesburg, South Africa

fYear

2014

fDate

26-28 Aug. 2014

Firstpage

1

Lastpage

9

Abstract

The switching characteristics of GaN FETs have not yet been measured accurately because of their small electromagnetic size in relation to the circuit and the electromagnetic environment the measurements are exposed to. Switching GaN FETs in a transmission line will allow for measurements to be taken in an electromagnetically defined environment. The transmission line is adapted to take optimum measurements. This is proven by the waveforms presented.

Keywords

III-V semiconductors; gallium compounds; power field effect transistors; power transmission lines; wide band gap semiconductors; coaxial transmission line; electromagnetic size; power semiconductor device; switching GaN FET; Electromagnetics; Field effect transistors; Gallium nitride; Power transmission lines; Switches; Transmission line measurements; Voltage measurement; Component for Measurements; Device Characterization; Device application; Emerging Technology; Gallium Nitride(GaN); Measurement; Power semiconductor device;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on

Conference_Location

Lappeenranta

Type

conf

DOI

10.1109/EPE.2014.6910756

Filename

6910756