Title :
A comparative study between zirconium dioxide and hafnium dioxide dielectric charges
Author :
Zoolfakar, A.S. ; Hashim, Habibah
Author_Institution :
Fac. of Electr. Eng., Univ. Teknol. MARA
Abstract :
In this paper, two types of promising high-k dielectric films is studied which are hafnium dioxide, HfO2 and zirconium dioxide,ZrO. Capacitance-Voltage measurements were carried out to investigate properties such as oxide charges and interface trap charges that exist in the dielectric films. The investigation has been carried out by experiment and modeling. Annealing experiments in forming gas at 380degC were conducted on both of the MOS capacitors. It was concluded that hafnium dioxide and zirconium dioxide have low oxide and interface charges. The reduction of oxide and interface charges by annealing is possible provided that the time taken for the annealing process is well controlled.
Keywords :
MOS capacitors; annealing; electric charge; hafnium compounds; high-k dielectric thin films; interface states; zirconium compounds; HfO2; MOS capacitors; ZrO2; annealing; capacitance-voltage measurements; dielectric charges; hafnium dioxide; high-k dielectric films; interface trap charges; temperature 380 degC; zirconium dioxide; Annealing; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Dielectric films; Dielectric measurements; Hafnium oxide; High-K gate dielectrics; MOS capacitors; Zirconium;
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
DOI :
10.1109/SMELEC.2008.4770360
