Design of 900MHz voltage-controlled oscillator using 0.18μm CMOS technology

Author

Maisurah, M.H.S. ; Marzuki, A. ; Azmi, I.M. ; Abdul Rahim, A.I. ; Razman, Y.M.

Author_Institution

TM R & D, TMR & D Innovation Centre, Cyberjaya

fYear

2008

fDate

25-27 Nov. 2008

Firstpage

462

Lastpage

465

Abstract

This paper presents the design of a 900 MHz LC oscillator implemented in 0.18 mum RF CMOS technology. Employing an on-chip PN varactor together with an on-chip spiral inductor, this voltage-controlled oscillator (VCO) achieves a simulated phase noise of - 100.9 dBc/Hz at a 100 kHz offset. The output frequency of the VCO can be tuned from 785 MHz to 955.6 MHz which correspond to 170.6 MHz tuning range, obtained by only tuning the control voltage to the diode varactor pairs. The VCO consumes 6.5 mW power from 1.6 V DC supply voltage.

Keywords

CMOS integrated circuits; UHF integrated circuits; UHF oscillators; circuit tuning; inductors; phase noise; varactors; voltage-controlled oscillators; CMOS technology; diode varactor control voltage tuning; frequency 100 kHz; frequency 170.6 MHz; frequency 785 MHz to 955.6 MHz; frequency 900 MHz; on-chip PN varactor; on-chip spiral inductor; oscillator tuning range; phase noise; power 6.5 mW; size 0.18 mum; voltage 1.6 V; voltage-controlled oscillator design; CMOS technology; Diodes; Inductors; Phase noise; Radio frequency; Spirals; Tuning; Varactors; Voltage control; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on

Conference_Location

Johor Bahru

Print_ISBN

978-1-4244-3873-0

Electronic_ISBN

978-1-4244-2561-7

Type

conf

DOI

10.1109/SMELEC.2008.4770364

Filename

4770364