DocumentCode :
2555928
Title :
CMOS standby leakage current problems in microcontroller device
Author :
Mamat, Hazian ; Sauli, Zaliman
Author_Institution :
Mimos Berhad, Kuala Lumpur
fYear :
2008
fDate :
25-27 Nov. 2008
Firstpage :
631
Lastpage :
633
Abstract :
Microcontrollers are popular devices uses in small electronic applications. The microcontroller device using CMOS logic processing with 3 metal layers and without CMP tools it makes planarization of ILDpsilas become tougher to handle with SOG machine alone. Most low yield happens when planarization of ILDpsilas layer is not consistence. The standby leakage current was suspected from inter metal dielectric thickness and via 2 resist removal process, which cause the metal line shorting. Investigation has been made and our studies have been carried out to determine the root cause for standby leakage current problem which cause the yield to drop. By using AIT scanning machine, FESEM, thickness, solvent optimization, we are able to prove the root cause for one of the yield killer.
Keywords :
CMOS logic circuits; dielectric thin films; integrated circuit yield; leakage currents; microcontrollers; resists; AIT scanning machine; CMOS logic processing; CMOS standby leakage current problem; CMP tools; FESEM; ILD planarization; SOG machine; inter metal dielectric thickness; metal layers; metal line shorting; microcontroller device; resist removal process; CMOS technology; Cleaning; Dielectrics; Etching; Leakage current; MIMO; Microcontrollers; Planarization; Resists; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
Type :
conf
DOI :
10.1109/SMELEC.2008.4770405
Filename :
4770405
Link To Document :
بازگشت