DocumentCode
2556084
Title
Thermal oxidation and stability of thin manganese films
Author
Zhang, Yi ; Qu, Xixin
Author_Institution
Dept. of Sensing Technol., Beijing Inf. Tech. Inst., China
fYear
1988
fDate
9-11 May 1988
Firstpage
604
Lastpage
608
Abstract
Microanalytical work shows that the main phase in thin Mn films is alpha Mn and that impurity elements O, C, and W, are found. The main compound formed by Mn and O in the films is MnO. The instability of thin Mn films is due to the transformations from elemental Mn to MnO and from MnO to Mn/sub 2/O/sub 3/ in the films. The metal resistance method is used to determine the oxidation kinetics of thin Mn films. It is determined that the oxide layers are protective and that under proper heat treatment the films could have satisfactory long-term thermal stability.<>
Keywords
electronic conduction in metallic thin films; heat treatment; manganese; metallic thin films; oxidation; thin film resistors; 200 C; Mn-O-C-W; Mn/sub 2/O/sub 3/; MnO; heat treatment; long-term thermal stability; metal resistance method; microstructure; morphology; oxidation kinetics; thermal oxidation; thin Mn films; thin film resistors; Electrons; Fabrication; Kinetic theory; Manganese; Optical films; Oxidation; Substrates; Temperature; Thermal stability; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Components Conference, 1988., Proceedings of the 38th
Conference_Location
Los Angeles, CA, USA
Type
conf
DOI
10.1109/ECC.1988.12655
Filename
12655
Link To Document