Title :
The next generation high voltage IGBT modules utilizing Enhanced-Trench ET-IGBTs and Field Charge Extraction FCE-Diodes
Author :
Andenna, M. ; Otani, Y. ; Matthias, S. ; Corvasce, C. ; Geissmann, S. ; Kopta, A. ; Schnell, R. ; Rahimo, Munaf
Author_Institution :
Semicond., ABB Switzerland Ltd., Lenzburg, Switzerland
Abstract :
In this paper, we present the next generation of IGBT modules employing the latest Enhanced Trench ET-IGBT and Field Charge Extraction FCE fast diode devices. Such technologies enable high power IGBT modules to be capable of providing higher level of electrical performance in terms of low losses, good controllability, high robustness and soft diode reverse recovery. The first prototype dual modules with the new chip technologies rated at 300A and 3300V were fabricated and tested. The paper will present in detail the ET-IGBT and FCE diode concepts, the full static and dynamic electrical test results and their impact for achieving higher levels of performance in future power electronics applications.
Keywords :
insulated gate bipolar transistors; power bipolar transistors; power field effect transistors; ET-IGBT; current 300 A; electrical performance; enhanced trench IGBT; fast diode device; field charge extraction FCE diodes; next generation high voltage IGBT module; power electronics application; voltage 3300 V; Capacitance; Controllability; Insulated gate bipolar transistors; Market research; Next generation networking; Performance evaluation; Semiconductor diodes; Diode; IGBT; Module; Trench;
Conference_Titel :
Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on
Conference_Location :
Lappeenranta
DOI :
10.1109/EPE.2014.6910854
