DocumentCode
2556472
Title
Ultra low phase noise 2.1 GHz Colpitts oscillators using BAW resonator
Author
El Aabbaoui, Hassan ; David, Jean-Baptiste ; De Foucauld, Emeric ; Vincent, Pierre
Author_Institution
CEA, Minatec, Grenoble, France
fYear
2009
fDate
7-12 June 2009
Firstpage
1285
Lastpage
1288
Abstract
This paper describes the design and the realization of a 2.1 GHz ultra low phase noise oscillator using BAW resonator and fabricated in BiCMOS technology. The oscillator is intended for a chip scale atomic clock (CSAC). Based on the Colpitts topology, two circuits have been designed and realized. These circuits can achieve a phase noise better than -83 dBc/Hz at 2 kHz offset, consume less than 10 mA and the area of the die is less than 2 mm2. To the author´s knowledge, these BAW oscillators present the lowest phase noise published in the literature.
Keywords
BiCMOS integrated circuits; acoustic resonators; bulk acoustic wave devices; network topology; oscillators; BAW resonator; BiCMOS technology; Colpitts topology; Ultra low phase noise oscillator; chip scale atomic clock; frequency 2.1 GHz; Atomic clocks; Frequency; Gas lasers; Laser transitions; Optical resonators; Phase noise; Resonance; Stability; Vertical cavity surface emitting lasers; Voltage-controlled oscillators; BAW resonator; CSAC; Oscillator; phase noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location
Boston, MA
ISSN
0149-645X
Print_ISBN
978-1-4244-2803-8
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2009.5165939
Filename
5165939
Link To Document