• DocumentCode
    2556472
  • Title

    Ultra low phase noise 2.1 GHz Colpitts oscillators using BAW resonator

  • Author

    El Aabbaoui, Hassan ; David, Jean-Baptiste ; De Foucauld, Emeric ; Vincent, Pierre

  • Author_Institution
    CEA, Minatec, Grenoble, France
  • fYear
    2009
  • fDate
    7-12 June 2009
  • Firstpage
    1285
  • Lastpage
    1288
  • Abstract
    This paper describes the design and the realization of a 2.1 GHz ultra low phase noise oscillator using BAW resonator and fabricated in BiCMOS technology. The oscillator is intended for a chip scale atomic clock (CSAC). Based on the Colpitts topology, two circuits have been designed and realized. These circuits can achieve a phase noise better than -83 dBc/Hz at 2 kHz offset, consume less than 10 mA and the area of the die is less than 2 mm2. To the author´s knowledge, these BAW oscillators present the lowest phase noise published in the literature.
  • Keywords
    BiCMOS integrated circuits; acoustic resonators; bulk acoustic wave devices; network topology; oscillators; BAW resonator; BiCMOS technology; Colpitts topology; Ultra low phase noise oscillator; chip scale atomic clock; frequency 2.1 GHz; Atomic clocks; Frequency; Gas lasers; Laser transitions; Optical resonators; Phase noise; Resonance; Stability; Vertical cavity surface emitting lasers; Voltage-controlled oscillators; BAW resonator; CSAC; Oscillator; phase noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
  • Conference_Location
    Boston, MA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-2803-8
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2009.5165939
  • Filename
    5165939