Title :
Complete method for Ebd correction by series resistance characterization
Author :
Monroe, David K. ; Swanson, Scot E.
Author_Institution :
Reliability Phys. Dept., Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
We have developed a semi-automated method for determining the series resistance profiles of dot capacitors and for obtaining corrected oxide fields at breakdown. This method is based upon a least-squares-fit of IV data, obtained from a voltage-ramp test, to the Fowler-Nordheim leakage model. The profiles provide insight into the general characteristics of series resistance. Certain features of the profiles can be associated with charge trapping and the onset of oxide breakdown
Keywords :
MOS capacitors; electric breakdown; least squares approximations; Fowler-Nordheim leakage model; I-V characteristics; MOS capacitor; SiO2; charge trapping; dot capacitor; electric breakdown; least squares approximation; oxide field; series resistance; voltage ramp testing; Breakdown voltage; Capacitance-voltage characteristics; Capacitors; Contacts; Electric breakdown; Electrical resistance measurement; Monitoring; Pollution measurement; Testing; Video recording;
Conference_Titel :
Integrated Reliability Workshop Final Report, 1998. IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-4881-8
DOI :
10.1109/IRWS.1998.745364
