A Comparison of Si CMOS and SiGe BiCMOS Technologies for Automotive Radars

Author

Margomenos, A.

Author_Institution

Toyota Res. Inst. North America, Ann Arbor, MI

fYear

2009

fDate

19-21 Jan. 2009

Firstpage

1

Lastpage

4

Abstract

This paper compares CMOS FET and SiGe HBT technologies for automotive applications and discusses limitations and opportunities for further development of both. SiGe circuits have demonstrated very promising performance, especially for the stringent reliability requirements and high temperature operating conditions set by the automotive industry. Their introduction to radar systems will occur in the near future. In the long run CMOS devices have the potential to become competitive in performance and offer opportunities for further reductions in manufacturing costs.

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; automotive electronics; elemental semiconductors; field effect transistors; heterojunction bipolar transistors; integrated circuit reliability; road vehicle radar; silicon; BiCMOS technologies; CMOS technologies; FET; GeSi; HBT; Si; automotive applications; automotive radars; high temperature operating conditions; reliability requirements; Automotive applications; Automotive engineering; BiCMOS integrated circuits; CMOS technology; FETs; Germanium silicon alloys; Heterojunction bipolar transistors; Radar; Silicon germanium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2009. SiRF '09. IEEE Topical Meeting on

Conference_Location

San Diego, CA

Print_ISBN

978-1-4244-3940-9

Electronic_ISBN

978-1-4244-2831-1

Type

conf

DOI

10.1109/SMIC.2009.4770485

Filename

4770485