A constant gate current technique for obtaining low-frequency C-V characteristics of MOS capacitors

Author

Qian, Jack G. ; Hensley, Roy A. ; Littefield, Eric

Author_Institution

Dallas Semicond. Inc., TX, USA

fYear

1998

fDate

12-15 Oct 1998

Firstpage

39

Lastpage

44

Abstract

A simple and accurate technique for low-frequency MOSFET gate capacitance measurement using the voltage response of these devices to constant gate current is described. The capability of this technique is demonstrated in Capacitance-Voltage (C-V) curves by showing the effects of gate current on the MOS characteristics. Using a Hewlett-Packard 4156 (HP4156) precision semiconductor parameter analyzer to measure the rate of voltage change across MOS capacitors while forcing a constant current, accurate C-V curve are derived over the 1pF to 1nF range

Keywords

MOS capacitors; MOSFET; capacitance measurement; semiconductor device measurement; 1 pF to 1 nF; Hewlett-Packard 4156 semiconductor parameter analyzer; MOS capacitor; MOSFET gate capacitance measurement; constant gate current technique; low-frequency capacitance-voltage characteristics; Capacitance; Capacitance-voltage characteristics; Current measurement; Equations; Force measurement; Frequency; Instruments; MOS capacitors; MOSFET circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 1998. IEEE International

Conference_Location

Lake Tahoe, CA

Print_ISBN

0-7803-4881-8

Type

conf

DOI

10.1109/IRWS.1998.745365

Filename

745365