DocumentCode
2556943
Title
Non-contact in-line monitoring of plasma-induced latent damage
Author
Turner, T. ; Weinzierl, S.
Author_Institution
Semicond. Div., Keithley Instrum. Inc., Cleveland, OH, USA
fYear
1998
fDate
12-15 Oct 1998
Firstpage
78
Lastpage
81
Abstract
This paper presents the results of a novel non-contact method for in-line monitoring of latent damage, and the test case presented is for plasma events. While the core method that is used is well established-using electric field, temperature, and time stresses to create the evolution of oxide charge states-this is the first reported implementation of it using a non-contact corona technique
Keywords
corona; electric breakdown; integrated circuit reliability; integrated circuit testing; process monitoring; electric field; noncontact corona technique; noncontact in-line monitoring; noncontact method; oxide charge states; plasma-induced latent damage; test case; time stresses; Corona; Current measurement; Monitoring; Plasma materials processing; Plasma temperature; Q measurement; Silicon; Stress; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 1998. IEEE International
Conference_Location
Lake Tahoe, CA
Print_ISBN
0-7803-4881-8
Type
conf
DOI
10.1109/IRWS.1998.745372
Filename
745372
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