Recent progress in wafer-fused VCSELs emitting in the 1550-nm band

Author

Sirbu, A. ; Caliman, A. ; Mereuta, A. ; Iakovlev, V. ; Suruceanu, G. ; Kapon, E.

Author_Institution

Swiss Fed. Inst. of Technol. Lausanne (EPFL), Lausanne, Switzerland

fYear

2011

fDate

26-30 June 2011

Firstpage

1

Lastpage

4

Abstract

Record-high fundamental mode output power of 1.5 mW at 100 °C is achieved with InAlGaAs-InP/AlGaAs-GaAs 1550 nm wavelength vertical cavity surface emitting lasers (VCSELs) produced by a modified wafer fusion technique. A broad wavelength setting on the same wafer in a spectral range of 40 nm is demonstrated with these devices. This performance positions wafer-fused 1550 nm VCSELs as prime candidates for many applications in photonics, including air-space fiber-optic communications and WDM-PON as well as in spectroscopy and sensing.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical fibre communication; passive optical networks; surface emitting lasers; wavelength division multiplexing; InAlGaAs-InP-AlGaAs-GaAs; WDM-PON; air-space fiber-optic communications; modified wafer fusion technique; power 1.5 mW; temperature 100 degC; wafer-fused VCSEL; wavelength 1550 nm; wavelength vertical cavity surface emitting lasers; Cavity resonators; Gallium arsenide; Indium phosphide; Photonics; Substrates; Temperature measurement; Vertical cavity surface emitting lasers; Long-wavelength VCSELs; fibre-optic communication; optical sensors; wafer fusion VCSEL technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks (ICTON), 2011 13th International Conference on

Conference_Location

Stockholm

ISSN

2161-2056

Print_ISBN

978-1-4577-0881-7

Electronic_ISBN

2161-2056

Type

conf

DOI

10.1109/ICTON.2011.5970822

Filename

5970822