In-Situ and At-Speed Modeling and Characterization of Logic Interconnect Device Considering Front-End/Back-End Interaction

Author

Cho, Choongyeun ; Kim, Daeik D. ; Kim, Jonghae

Author_Institution

IBM Semicond. R&D Center, Hopewell Junction, NY

fYear

2009

fDate

19-21 Jan. 2009

Firstpage

1

Lastpage

4

Abstract

The paper presents a logic interconnect device (LED) to model digital circuit with near back-end-of-line (BEOL) effect, and to measure system performance. It is driven by a product inverter-based logic circuit, and it is loaded with near-BEOL wiring. The LID ring oscillator is measured and analyzed in 65 nm SOI CMOS. The methodology offers in-situ characterization of near-BEOL interconnect parasitics, and dielectric constant in product circuits. It captures front-end-of-line (FEOL) and near-BEOL interactions, distinguished in deeply scaled CMOS.

Keywords

CMOS integrated circuits; digital integrated circuits; integrated circuit interconnections; integrated logic circuits; oscillators; permittivity; silicon-on-insulator; SOI CMOS; Si; back-end-of-line effect; dielectric constant; digital circuit; front-end/back-end interaction; interconnect parasitics; inverter-based logic circuit; logic interconnect device; ring oscillator; CMOS logic circuits; Dielectric measurements; Digital circuits; Integrated circuit interconnections; Light emitting diodes; Logic circuits; Logic devices; Semiconductor device modeling; System performance; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2009. SiRF '09. IEEE Topical Meeting on

Conference_Location

San Diego, CA

Print_ISBN

978-1-4244-3940-9

Electronic_ISBN

978-1-4244-2831-1

Type

conf

DOI

10.1109/SMIC.2009.4770514

Filename

4770514